> PRODUCT > SEG(Selective Epitaxial Growth)
The Harrier-M™ is a mini batch ALD system for NAND, DRAM and Logic device which has better ALD performance with small volume, narrow gap & wide boat pitch. The better ALD performance with faster pumping/purge ability can provide increased film quality with precision material engineering, excellent step coverage, minimal pattern loading, lower impurity and best wafer to wafer uniformity with compact “5+1” zone heater.
- Temperature Range: 400~850°C
- Dual Tube (Inner & Outer Tube)
- Smaller Volume & Higher Vacuum Conductance
- Direct Laminar Flow with Narrow Gap & Wide Boat Pitch
- Compact “5+1” Zone Heater Design
- Chamber In-situ Cleaning
- Precision Material Engineering with Better ALD Performance
- Excellent Step Coverage
- Excellent Within Wafer and Wafer to Wafer Uniformity
- Minimal Pattern Loading Effect
- Lower Film Impurity
- Well-proven Safety for High Temperature Process
- High Throughput with Improved UPS
LSI | NAND | DRAM |
---|---|---|
- PMOS TiN - Low-k Spacer : SiOCN - ALD SiO & SiN |
- 3Charge Trap Nitride - 3Tunnel Oxide - 3IPD ONO - 3High Quality 3D Gap-fill SiO/SiN - 3Gate BM TiN/TSN |
- Low-k Spacer : SiOCN - Top/BTM Electrode TiN |